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KMID : 1059519970410050223
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Journal of the Korean Chemical Society
1997 Volume.41 No. 5 p.223 ~ p.233
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Growth and Characterization of Ultra-Thin TiO2 Film on Mo(100) Surface
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Kim Dae-Young
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Abstract
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Ultra-thin TiO2 films are grown on the Mo(100) surface using evaporated Ti metal under ambient O2 pressure. The thickness of the TiO2 film is controlled by the dosing rate of Ti metal over Mo(100) which is determined from the Auger signal changes with dosing time. 30 ML, 5 ML, and 1.6 ML thick films are prepared and used to determine the growth mechanism, the chemical composition, and the surface structure of the films. The growth mechanism of the TiO2 film on Mo(100) is observed to follow the layer-by-layer growth mechanism. The chemical composition of the film is found to be that of bulk TiO2. The surface plane of the film is (001), which facets irreversibly at 1200 K. The LEED pattern obtained from the film can be explained with the faceted surface with {011} planes reconstructed to (2√2×√2)R45° with respect to the TiO2(001) surface. The film is somewhat thermally unstable when annealed to 1300 K. The film sputtered with Ar+ ion is also studied by XPS.
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